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نویسندگان مقالات پربازدید :
مجله مواد الکترونیکی 2013
جزئیات رویداد
همایش ، رویداد ، ژورنال
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  • impact of pad conditioning on thickness profile control in chemical mechanical planarization

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    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 981
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
     chemical mechanical planarization (cmp) has been proven to be the best method to achieve within-wafer and within-die uniformity for multilevel metallization. decreasing device dimensions and increasing wafer sizes continuously demand better planarization, which necessitates better understanding of all the variables of the cmp process. a recently highlighted critical factor, pad conditioning, affects the pad surface profile and consequently the wafer profile; in addition, it reduces defects by refreshing the pad surface during polishing. this work demonstrates the changes in the postpolish wafer profile as a function of pad wear. it also introduces a wafer material removal rate profile model based on the locally relevant preston equation by estimating the pad thickness profile as a function of polishing time. the result is a dynamic predictor of how the wafer removal rate profile shifts as the pad ages. the model helps fine-tune the pad conditioner operating characteristics without the requirement for costly and lengthy experiments. the accuracy of the model is demonstrated by experiments as well as data from a real production line. both experimental data and simulations indicate that the smaller conditioning disk size and extended conditioning sweep range help improve the post-cmp wafer planarization. however, the defectivity tends to increase when the conditioning disk sweeps out of the pad radius; hence, the pad conditioning needs to be designed by considering the specific requirements of the cmp process conducted. the presented model predicts the process outcomes without requiring detailed experimentation.

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