مقاله Variable-Field Hall Measurement and Transport in LW Single-Layer n-Type MBE Hg1−x Cd x Te : تی پی بین

خلاصه مقاله

Molecular beam epitaxy n-type long-wavelength infrared (LWIR) Hg1−x Cd x Te (MCT) has been investigated using variable-field Hall measurement in the temperature range from 50 K to 293 K. A quantitative mobility spectrum analysis technique has been used to determine the role of multicarrier transport properties with respect to epilayer growth on lattice-matched cadmium zinc telluride, as well as lattice-mismatched silicon (Si) and gallium arsenide (GaAs) buffered substrates. Overall, after postgrowth annealing, all layers were found to possess three distinct electron species, which were postulated to originate from the bulk, transitional (or higher-x-value) regions, and an interfacial/surface layer carrier. Further, the mobility and concentration with respect to temperature were analyzed for all carriers, showing the expected mobility temperature dependence and intrinsic behavior of the bulk electron. Electrons from transitional regions were seen to match expected values based on the carrier concentration of the resolved peak. At high temperature, the lowest-mobility carrier was consistent with the properties of a surface carrier, while below 125 K it was postulated that interfacial-region electrons may influence peak values. After corrections for x-value and doping density at 77 K, bulk electron mobility in excess of 105 cm2 V−1 s−1 was observed in all epilayers, in line with expected values for lightly doped n-type LWIR material. Results indicate that fundamental conduction properties of electrons in MCT layers are unchanged by choice of substrate.

نویسندگان

[ U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA ]

M. Jaime-Vasquez [ U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA ]

L. A. Almeida [ U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA ]

J. Arias [ U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA ]

C. M. Lennon [ U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA ]

کلمات کلیدی

HgCdTe electrical characterization molecular beam epitaxy quantitative mobility spectrum analysis (QMSA) Hall effect measurement multicarrier conduction

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Journal of Electronic Materials 2013

The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.

حوزه های تحت پوشش : nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications