مقاله Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut : تی پی بین

خلاصه مقاله

The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0° and 6° offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6° offcut presents ∼65% higher threading dislocation density and higher root-mean-square (RMS) surface roughness (1.92 nm versus 0.98 nm) than Ge film grown on Si (001) with 0° offcut. Plan-view transmission electron microscopy also reveals that threading dislocations are more severe (in terms of contrast and density) for the 6° offcut. In addition, both high-resolution x-ray diffraction and Raman spectroscopy analyses show that the Ge epilayer on 6° offcut wafer presents higher tensile strain. The poorer quality of the Ge film on Si (001) with 6° offcut is a result of an imbalance in Burgers vectors that favors dislocation nucleation over annihilation.

نویسندگان

Kwang Hong Lee [ Singapore–MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore, Singapore, 138602 ]

Yew Heng Tan [ School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore, 639798 ]

Adam Jandl [ Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA ]

Eugene A. Fitzgerald [ Singapore–MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore, Singapore, 138602 ]

Chuan Seng Tan [ Singapore–MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore, Singapore, 138602 ]

کلمات کلیدی

Germanium offcut heteroepitaxy reduced pressure chemical vapor deposition

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Journal of Electronic Materials 2013

The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.

حوزه های تحت پوشش : nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications