• on the thermoelectric properties of zintl compounds mg3bi2−x pn x (pn = p and sb)

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    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 1072
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     a series of zintl compounds mg3bi2-x pn x (p= p and sb) have been synthesized by the solid-state reaction method. while sb can be substituted to a level as high as x = 1.0, p can be substituted only up to x = 0.5. the thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), seebeck (α) and hall coefficients, and thermal conductivity between 80 k and 850 k. the measured resistivity and seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. hall measurements suggest that the carriers are ptype with concentration (p) increasing from ~1019 cm−3 to ~1020 cm−3 as the bi content is increased. the hall mobility decreases with increasing temperature (t) and reaches a more or less similar value (~45 cm2/v s) for all substituted compositions at room temperature. due to mass defect scattering, the lattice thermal conductivity (κ l) is decreased to a minimum of ~1.2 w/m k in mg3bisb. the power factor (α 2/ρ) is found to be rather low and falls in the range 0.38 mw/m k2 to 0.66 mw/m k2. as expected, at a high temperature of 825 k, the total thermal conductivity (κ) of mg3bisb reaches an impressive value of ~1.0 w/m k. the highest dimensionless figure of merit (zt) is realized for mg3bisb and is ~0.4 at 825 k.

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