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مجله مواد الکترونیکی 2013
جزئیات رویداد
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  • measurement of thermoelectric properties of single semiconductor nanowires

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    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 751
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    • شماره تماس دبیرخانه رویداد: -
     we have measured the thermopower and the thermal conductivity of individual silicon and indium arsenide nanowires (nws). in this study, we evaluate a self-heating method to determine the thermal conductivity λ. experimental validation of this method was performed on highly n-doped si nws with diameters ranging from 20 nm to 80 nm. the si nws exhibited electrical resistivity of  ρ=(8±4)mωcm

    at room temperature and seebeck coefficient of −(250 ± 100) μv/k. the thermal conductivity of si nws measured using the proposed method is very similar to previously reported values; e.g., for si nws with 50 nm diameter, λ = 23 w/(m k) was obtained. using the same method, we investigated inas nws with diameter of 100 nm and resistivities of ρ=(25±5) mωcm

    at room temperature. thermal conductivity of λ = 1.8 w/(m k) was obtained, which is about 20 to 30 times smaller than in bulk inas. we analyzed the accuracy of the self-heating method by means of analytical and numerical solution of the one-dimensional (1-d) heat diffusion equation taking various loss channels into account. for our nws suspended from the substrate with low-impedance contacts the relative error can be estimated to be ≤25%.

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