• influence of annealing on electrical properties of an organic thin layer-based n-type inp schottky barrier diode

    جزئیات بیشتر مقاله
    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 764
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     the electrical properties of a fabricated au/polymethylmethacrylate (pmma)/n-inp schottky barrier diode have been analyzed for different annealing temperatures using current–voltage (iv) and capacitance–voltage (cv) techniques. it is observed that the au/pmma/n-inp structure shows excellent rectifying behavior. the extracted barrier height and ideality factor of the as-deposited au/pmma/n-inp schottky contact are 0.68 ev (jv)/0.82 ev (cv) and 1.57, respectively. however, the barrier height (bh) of the au/pmma/n-inp schottky contact increases to 0.78 ev (jv)/0.99 ev (cv) when the contact is annealed at 150°c for 1 min in nitrogen atmosphere. upon annealing at 200°c, the bh value decreases to 0.72 ev (jv)/0.90 ev (cv) and the ideality factor increases to 1.48. the pmma layer increases the effective barrier height of the structure by creating a physical barrier between the au metal and the n-inp. cheung’s functions are also used to calculate the series resistance of the au/pmma/n-inp structure. the interface state density (n ss) is found to be 6.380 × 1012 cm−2 ev−1 and 1.916 × 1012 cm−2 ev−1 for the as-deposited and 150°c-annealed au/pmma/n-inp schottky contacts, respectively. these results indicate that the interface state density and series resistance have a significant effect on the electrical characteristics of au/pmma/n-inp schottky barrier devices. finally, it is noted that the diode parameters change with increasing annealing temperature.

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