• effects of h2o pretreatment on the capacitance–voltage characteristics of atomic-layer-deposited al2o3 on ga-face gan metal–oxide–semiconductor capacitors

    جزئیات بیشتر مقاله
    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 815
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
     atomic layer deposition (ald) of al2o3 on ga-face gan is studied with respect to the effects of growth saturation, precursor injection sequence, and h2o pretreatment. a metal–oxide–semiconductor capacitor (moscap) structure is fabricated to measure the capacitance–voltage (cv) characteristics. the origin of cv hysteresis is explained by a model considering the different trapping behaviors of interface states and oxide border traps. the interface state density (d it) is extracted as a function of band bending using an ultraviolet (uv)-assisted method. it is found that h2o pretreatment followed by saturated ald growth produces the best interface quality, with a reduced d it compared with growth without h2o pretreatment.

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