مقاله Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires : تی پی بین

خلاصه مقاله

We report the growth of graded InGaN nanowires by plasma-assisted molecular beam epitaxy. Wire composition is linearly graded from InN to GaN along the length of each wire. The large lattice mismatch between GaN and InN (11%) introduces tensile strain in the graded region, which results in cracking of the wires. Growing with reverse grading (i.e., GaN to InN) results in crack-free nanowires. The composition is measured by energy-dispersive x-ray spectroscopy of individual nanowires performed in a scanning transmission electron microscope, and strain is measured by high-resolution x-ray diffraction

نویسندگان

Masihhur R. Laskar [ . Department of Material Science and Engineering, The Ohio State University, Columbus, OH, 43210, USA ]

Santino D. Carnevale [ . Department of Material Science and Engineering, The Ohio State University, Columbus, OH, 43210, USA ]

A. T. M. Golam Sarwar [ Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, 43210, USA ]

Patrick J. Phillips [ . Department of Physics, University of Illinois at Chicago, Chicago, IL, 60607, USA ]

Michael J. Mills [ . Department of Material Science and Engineering, The Ohio State University, Columbus, OH, 43210, USA ]

کلمات کلیدی

InGaN nanowires composition gradient strain relaxation nitrides molecular beam epitaxy

آدرس این مقاله

آدرس مستقیم دسترسی به این مقاله

مشخصات کنفرانس

مشاهده مقالات

Journal of Electronic Materials 2013

The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.

حوزه های تحت پوشش : nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications