• enhanced thermoelectric properties of antimony telluride thin films with preferred orientation prepared by sputtering a fan-shaped binary composite target

    جزئیات بیشتر مقاله
    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 854
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
     p-type antimony telluride (sb2te3) thermoelectric thin films were deposited on bk7 glass substrates by ion beam sputter deposition using a fan-shaped binary composite target. the deposition temperature was varied from 100°c to 300°c in increments of 50°c. the influence of the deposition temperature on the microstructure, surface morphology, and thermoelectric properties of the thin films was systematically investigated. x-ray diffraction results show that various alloy composition phases of the sb2te3 materials are grown when the deposition temperature is lower than 200°c. preferred c-axis orientation of the sb2te3 thin film became obvious when the deposition temperature was above 200°c, and thin film with single-phase sb2te3 was obtained when the deposition temperature was 250°c.scanning eiectron microscopy reveals that the average grain size of the films increases with increasing deposition temperature and that the thin film deposited at 250°c shows rhombohedral shape corresponding to the original sb2te3 structure. the room-temperature seebeck coefficient and electrical conductivity range from 101 μv k−1 to 161 μv k−1 and 0.81 × 103 s cm−1 to 3.91 × 103 s cm−1, respectively, as the deposition temperature is increased from 100°c to 300°c. an optimal power factor of 6.12 × 10−3 w m−1 k−2 is obtained for deposition temperature of 250°c. the thermoelectric properties of sb2te3 thin films have been found to be strongly enhanced when prepared using the fan-shaped binary composite target method with an appropriate substrate temperature.

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