• characterization of nonstoichiometric ti1+x se2 prepared by the method of modulated elemental reactants

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    جزئیات بیشتر مقاله
    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
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      the method of modulated elemental reactants (mer) is used to prepare the layered compound ti1+xse2. using a thin-film precursor prepared by sequentially depositing elemental titanium and selenium by physical vapor deposition, the binary compound is readily formed by short-duration annealing at 350°c. x-ray diffraction indicates that tise2 layers in the film are highly oriented with the c-axis of the layers perpendicular to the substrate. temperature-dependent electrical resistivity and hall coefficient measurements for the mer-prepared specimen reveal temperature dependence that is distinct from crystalline stoichiometric tise2 in bulk form. the room-temperature seebeck coefficient was measured to be −134 μv/k, which is opposite in sign and significantly larger in magnitude than stoichiometric crystalline tise2, suggesting that carrier transport in the disordered film is markedly different from the bulk crystalline material.

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