مقاله Nonradiative Energy Transfer Between Colloidal Quantum-Dot Phosphors and Silicon Carbide Diodes : تی پی بین

خلاصه مقاله

Nonradiative Energy Transfer Between Colloidal Quantum-Dot Phosphors and Silicon Carbide Diodes

Nonradiative energy transfer between colloidal quantum-dot (QD) phosphors and the active region of an indirect-bandgap semiconductor diode was investigated. A silicon carbide (SiC) p–n junction was fabricated and surface-patterned with arrays of holes, facilitating the sidewall coupling between the QDs and the SiC p–n junction. Nonradiative energy transfer was observed from the SiC diode to the colloidal QD phosphors, which was characterized with a color conversion efficiency of 3.1%. Time-resolved photoluminescence measurements were conducted to verify and characterize the energy transfer process between the diode and QDs. The carrier recombination lifetime of SiC was found to decrease upon the presence of QD phosphors, which provides further evidence for the presence of the nonradiative energy transfer path between the QDs and the SiC diode.

نویسندگان

Jie Liu [ Department of Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA ]

Fan Zhang [ Department of Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA ]

Guanjun You [ Department of Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA ]

Yu Zhang [ Department of Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA ]

Lai Wei [ Department of Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA ]

کلمات کلیدی

Quantum dot energy transfer phosphors

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مشاهده مقالات

Journal of Electronic Materials 2013

The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.

حوزه های تحت پوشش : nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications