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مجله مواد الکترونیکی 2013
جزئیات رویداد
همایش ، رویداد ، ژورنال
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  • effect of initial bulk material composition on thermoelectric properties of bi2te3 thin films

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    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 921
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
      v2vi3 compounds and solid solutions based on them are known to be the best low-temperature thermoelectric (te) materials. the predicted possibility of enhancement of the te figure of merit in two-dimensional (2d) structures has stimulated studies of the properties of these materials in the thin-film state. the goal of the present work is to study the dependences of the seebeck coefficients, electrical conductivity σ, hall coefficient r h, charge carrier mobility μ h, and te power factorp = s 2 σ of bi2te3 thin films on the composition of the initial bulk material used for preparing them. thin films with thickness d = 200 nm to 250 nm were grown by thermal evaporation in vacuum of stoichiometric bi2te3 crystals (60.0 at.% te) and of crystals with 62.8 at.% te onto glass substrates at temperatures t s of 320 k to 500 k. it was established that the conductivity type of the initial material is reproduced in films fairly well. for both materials, an increase in t s leads to an increase in the thin-film structural perfection, better correspondence between the film composition and that of the initial material, and increase in s, r h, μ h, σ, and p. the room-temperature maximum values ofp for the films grown from crystals with 60.0 at.% and 62.8 at.% te are p = 7.5 × 10−4 w/k2 m and 35 × 10−4 w/k2 m, respectively. thus, by using bi2te3 crystals with different stoichiometry as initial materials, one can control the conductivity type and te parameters of the films, applying a simple and low-cost method of thermal evaporation from a single source.

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