• comparison study of structural and optical properties of boron-doped and undoped graphene oxide films

    کلمات کلیدی :
    جزئیات بیشتر مقاله
    • تاریخ ارائه: 1392/01/01
    • تاریخ انتشار در تی پی بین: 1392/01/01
    • تعداد بازدید: 573
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
     we prepared boron (b)-doped graphene oxides (gos) by means of annealing the films, which were obtained from the suspensions of go and h3bo3 in n,n-dimethylformamide solvent. the interplanar spacing of as-synthesized go in x-ray diffraction spectra has been reduced by the thermal annealing at 1100 °c. first-order raman spectra revealed that the intensity ratio of the d and g bands of b-doped go was significantly lower than those of as-synthesized and annealed gos, suggesting more graphitization of the b-doped go due to doping effect. the c1s x-ray photoelectron spectroscopy (xps) of b-doped go films not only indicated that considerable amount of functional groups has been removed but also exhibited the peak of c - b band at around 283.7 ev. additionally, the b1s xps spectrum of b-doped gos could be deconvoluted into several peaks centered at 187.2, 188.9, 190.3, 192.0 and 193.7 ev, being attributed to the presence of b atom in b4c, b-sub-c, bc2o, bco2 and b2o3, respectively. comparison of the photoluminescence spectra of b-doped go with that of 1100 °c-annealed go indicated that the overall intensity was decreased, presumably due to the b-induced graphitization. an additional band at around 600–700 nm from b-doped go is attributed to the generated boron carbide phases.

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