• جزئیات بیشتر مقاله
    • تاریخ ارائه: 1390/01/01
    • تاریخ انتشار در تی پی بین: 1390/01/01
    • تعداد بازدید: 557
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
     thermodiffusion or thermomigration phenomenon and the presence of convection are investigated in a binary molten semiconductor–metal layer heated from top or bottom. these phenomena may be locally present in the zone melting temperature gradient (zmtg) method used for the fabrication of semiconductor devices and solar cells. thermodiffusion is studied using the linear nonequilibrium thermodynamics, whereas convection is studied by solving the transport equations numerically in a stationary molten cell. an expression is obtained to estimate thermodiffusion factor in stationary binary semiconductor–metal mixtures. the presence of convection in various cases is studied as well. in the absence of any experimental data on stationary semiconductor–metal mixtures, the prediction power of the developed expression is tested against the experimental data of the moving melting zone in the zmtg process on mixtures comprised of silicon as a semiconductor and aluminum, gallium, and gold as metal dopants. the expression can only qualitatively predict the migration velocity of the melting zone, perhaps due to the inadequacy of the nonequilibrium thermodynamics to model this process, and the uncertainties in the experimental data due to the presence of both thermodiffusion and the gravity-induced convection in the molten zone.

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