نتایج جستجو برای ' offcut '

 Molten KOH etching and x-ray topography have been well established as two of the major characterization techniques used for observing as well as analyzing the various crystallographic defects in both substrates and homoepitaxial layers of silicon carbide. Regarding assessment of dislocation density in commercial wafers, though the two techniques show good consistency in threading dislocation density analysis, significant discrepancy is found in the case of basal plane dislocations (BPDs). ...

 The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0° and 6° offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6° offcut presents ∼65% higher threading dislocation density and higher root-mean-square (RMS) surface roughness (1.92 nm versus 0.98 nm) than Ge film grown on Si (001) with 0° offcut. Plan-view transmission electron microscopy also ...