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نویسندگان مقالات پربازدید :
مجله مواد الکترونیکی 2013
جزئیات رویداد
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همایش ، رویداد ، ژورنال

  • investigations of 2.9-ghz resonant microwave-sensitive ag/mgo/ge/ag tunneling diodes

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    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 1046
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
     in this work, a resonant microwave-sensitive tunneling diode has been designed and investigated. the device, which is composed of a magnesium oxide (mgo) layer on an amorphous germanium (ge) thin film, was characterized by means of temperature-dependent current (i)–voltage (v), room-temperature differential resistance (r)–voltage, and capacitance (c)–voltage characteristics. the device resonating signal was also tested and evaluated at 2.9 ghz. the i–v curves reflected weak temperature dependence and a wide tunneling region with peak-to-valley current ratio of ∼1.1. the negative differential resistance region shifts toward lower biasing voltages as temperature increases. the true operational limit of the device was determined as 350 k. a novel response of the measuredr–v and c–v to the incident alternating-current (ac) signal was observed at 300 k. particularly, the response to a 100-mhz signal power ranging from the standard bluetooth limit to the maximum output power of third-generation mobile phones reflects a wide range of tunability with discrete switching property at particular power limits. in addition, when the tunnel device was implanted as an amplifier for a 2.90-ghz resonating signal of the power of wireless local-area network (lan) levels, signal gain of 80% with signal quality factor of 4.6 × 104 was registered. these remarkable properties make devices based on mgo-ge interfaces suitable as electronic circuit elements for microwave applications, bias- and time-dependent electronic switches, and central processing unit (cpu) clocks.

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