• strain determination in quasi-lattice-matched lwir hgcdte/cdznte layers

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    جزئیات بیشتر مقاله
    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 854
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     we take advantage of the zinc distribution of (211)b cdznte substrates to probe the lattice-mismatch-induced stress in long-wave infrared hgcdte layers grown by molecular beam epitaxy. high-resolution x-ray diffraction is used to accurately determine the strain-free lattice parameters of both cdznte and hgcdte, together with the in-plane components of the stress tensor. by using several wafers, the stress evolution is derived over a broad range of lattice mismatch. in particular, stress relaxation is evidenced for mismatch greater than 0.02% and 0.04% for tensile and compressively strained hgcdte, respectively. in-plane strain anisotropy, expected for the (211) orientation, is only evidenced for the compressive configuration. strain relaxation is correlated with substrate curvature and rocking-curve peak broadening, providing indirect evidence for plastic relaxation.

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