مقاله Effect of Ti Substitution on Thermoelectric Properties of W-Doped Heusler Fe2VAl Alloy : تی پی بین

خلاصه مقاله

Effects of element substitutions on thermoelectric properties of Heusler Fe2VAl alloys were evaluated. By W substitution at the V site, the thermal conductivity is reduced effectively because of the enhancement of phonon scattering resulting from the introduction of W atoms, which have much greater atomic mass and volume than the constituent elements of Fe2VAl alloy. W substitution is also effective to obtain a large negative Seebeck coefficient and high electrical conductivity through an electron injection effect. To change the conduction type from n-type to p-type, additional Ti substitution at the V site, which reduces the valence electron density, was examined. A positive Seebeck coefficient as high as that of conventional p-type Fe2VAl alloy was obtained using a sufficient amount of Ti substitution. Electrical resistivity was reduced by the hole doping effect of the Ti substitution while maintaining low thermal conductivity. Compared with the conventional solo-Ti-substituted p-type Fe2VAl alloy, the ZT value was improved, reaching 0.13 at 450 K.

نویسندگان

M. Mikami [ National Institute of Advanced Industrial Science and Technology, Nagoya, 463-8560, Japan ]

K. Ozaki [ National Institute of Advanced Industrial Science and Technology, Nagoya, 463-8560, Japan ]

H. Takazawa [ National Institute of Advanced Industrial Science and Technology, Tsukuba, 305-8568, Japan ]

A. Yamamoto [ National Institute of Advanced Industrial Science and Technology, Tsukuba, 305-8568, Japan ]

Y. Terazawa [ Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan ]

کلمات کلیدی

Thermoelectric material Heusler alloy powder metallurgy element substitution

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Journal of Electronic Materials 2013

The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.

حوزه های تحت پوشش : nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications