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مجله مواد الکترونیکی 2013
جزئیات رویداد
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  • titanium-based getter solution for wafer-level mems vacuum packaging

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    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
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      ultrahigh-vacuum conditions can be achieved by employing porous absorbent materials such as ti, zr, ta, and yt. commercial getters are primarily zr-based, since zr possesses the best adsorption characteristics. titanium is not considered as a candidate, since adsorption of gases by ti is significantly reduced due to oxidation and other contamination. in the present work, it is demonstrated that the adsorption property of ti can be substantially enhanced and benchmarked against other zr-based commercial getters by employing a sacrificial layer such as ni over ti, and also by using other surface engineering techniques. it has been confirmed that, in addition to the activation temperature, the vacuum level during getter activation also plays a pivotal role in influencing the adsorption characteristics of ti. it has been determined that the getter life could be significantly improved by the reversible adsorption characteristic of h2 gas, facilitating regeneration cycles.

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