• low-temperature processing of pzt thick film by seeding and high-energy ball milling and studies on electrical properties

    جزئیات بیشتر مقاله
    • تاریخ ارائه: 1392/07/24
    • تاریخ انتشار در تی پی بین: 1392/07/24
    • تعداد بازدید: 811
    • تعداد پرسش و پاسخ ها: 0
    • شماره تماس دبیرخانه رویداد: -
     lead zirconate titanate thick film with molecular formula pbzr0.52ti0.42o3 (pzt) was prepared by a modified conventional sol–gel method through seeding and high-energy ball milling, resulting in perovskite phase formation at lower temperatures. the ball-milling time was optimized by keeping the seed particle loading (5 wt.%) constant in the sol–gel solution. this methodology helped in reduction of the crystalline phase formation temperature to 300°c, which is much lower than that reported in the literature (450°c). the well-established perovskite phase was confirmed by x-ray diffraction (xrd) analysis.scanning electron micoscopy  (sem) of pzt films revealed uniform and crystalline microstructure. film prepared by this methodology showed higher spontaneous polarization (2.22 μc/cm2), higher capacitance (1.17 nf), and low leakage current density (18μa/cm2). the results obtained from ferroelectric characterization showed a strong correlation with the xrd and sem results.

سوال خود را در مورد این مقاله مطرح نمایید :

با انتخاب دکمه ثبت پرسش، موافقت خود را با قوانین انتشار محتوا در وبسایت تی پی بین اعلام می کنم
مقالات جدیدترین ژورنال ها